Si7431DP-T1-GE3 Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance Patch QFN

Price: 35.0 5.28
Domestic Shipping: ¥12 1.81
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  • brand: VISHAY
    model: Si7431DP-T1-GE3
    encapsulation: QFN-8
    Batch number: 2020
    Drain source voltage (VDSS): 200
    Drain current (ID): 3.8
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    Si7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFN
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Price: 35.0 5.28
Domestic Shipping: 12 1.81
Si7431DP-T1-GE3 Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance Patch QFN

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brand:VISHAY
model:Si7431DP-T1-GE3
encapsulation:QFN-8
Batch number:2020
Drain source voltage (VDSS):200
Drain current (ID):3.8
Si7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFNSi7431DP-T1-GE3   Field effect transistor P Channel Withstand voltage 200V3.8A electric current bottom internal resistance   Patch QFN
  • Items that cannot be shipped through mail

  • 1. Items forbidden to be circulated or shipped according to the national law.

  • 2. Explosive, flammable, erosive, radioactive or toxic hazardous items.

  • 3. Publications, books, sources or items containing reactionary content or obscenity.

  • 4. Currencies of all kinds.

  • 5. Items that violate public health.

  • 6. Items that rot easily.

  • 7. Live animals (not counting bees, silkworms and leeches, as long as the packaging ensures the safety of the workers).

  • 8. Items that are not adequately packaged and may cause hazards to the workers, or contaminate or damage other packages.

  • 9. Other items unsuitable for shipment though mail.

  • Shipping Method
  • Delivery Time
  • Shipment Feature

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